Title
Performance Characterization of TSV in 3D IC via Sensitivity Analysis
Abstract
In this paper, we propose a method that can characterize the propagation delays across the Through Silicon Vias (TSVs) in a 3D IC. We adopt the concept of the oscillation test, in which two TSVs are connected with some peripheral circuit to form an oscillation ring. Upon this foundation, we propose a technique called sensitivity analysis to further derive the propagation delay of each individual TSV participating in the oscillation ring-a distilling process. In this process, we perturb the strength of the two TSV drivers, and then measure their effects in terms of the change of the oscillation ring's period. By some following analysis, the propagation delay of each TSV can be revealed. Monte-Carlo analysis of a typical TSV with 30% process variation on transistors shows that the characterization error of this method is only 2.1% with the standard deviation of 8.1%.
Year
DOI
Venue
2010
10.1109/ATS.2010.73
Asian Test Symposium
Keywords
Field
DocType
process variation,tsv,ring oscillation,monte-carlo analysis,performance characterization,typical tsv,three-dimensional integrated circuits,oscillation ring,through silicon vias,individual tsv,propagation delay,following analysis,monte carlo methods,oscillation test,monte carlo analysis,tsv driver,3d ic,testing,sensitivity analysis,3d-ic,oscillations,capacitance,3d,through silicon via,ring oscillator,oscillators,standard deviation
Monte Carlo method,Oscillation,Capacitance,Propagation delay,Computer science,Electronic engineering,Three-dimensional integrated circuit,Process variation,Transistor,Standard deviation
Conference
ISSN
ISBN
Citations 
1081-7735
978-1-4244-8841-4
34
PageRank 
References 
Authors
1.71
8
5
Name
Order
Citations
PageRank
Jhih-Wei You1462.46
Shi-Yu Huang276670.53
Ding-Ming Kwai352146.85
Yung-Fa Chou424423.76
Wu, Cheng-Wen51843170.44