Paper Info
Title
A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface
Abstract
The process variation among 512 DRAM samples is more than 30%. The performance variation of general circuits is predicted to be over 60% in 2012. In general, a single-die-based DRAM has a large process variation from chip to chip, which among other parameters, causes tAC (address access time) variation in the application system. In order to reduce the tAC variation, most highspeed SDRAMs adopt a delay-locked loop (DLL) at the cost of additional area and power consumption. For TSV-based stacked dies, large tAC variantion results in higher power consumption due to short circuit current from data conflicts among shared I/Os. Since the number of I/Os for TSV-based stacked DRAM (TSV DRAM) might be 512 or more, the additional power consumption can be very high. Even though it is desirable in mobile DRAM to exclude the DLL because of the power cost, TSV DRAM for high-speed operation partially adopts a DLL in the master die. Our DLL-based data self-aligner (DBDA) reduces the data conflict time among stacked dies, consuming 283.2μW during read operation at 800Mb/s/pin. It dissipates 4.98μW in self-refresh mode with the help of leakage-current-reduction controller.
Year
DOI
Venue
2012
10.1109/ISSCC.2012.6176873
ISSCC
Keywords
DocType
ISSN
process variation,power 4.98 muw,tsv interface,power consumption,short-circuit currents,single-die-based dram,self-refresh mode,leakage currents,master die,high-speed operation,short circuit current,tsv-based stacked dies,three-dimensional integrated circuits,mobile dram,sdram,dll-based data self-aligner,shared i/o,delay-locked loop,dram chips,read operation,tsv-based stacked dram,power cost,address access time variation,through-silicon via,power 283.2 muw,dbda,delay lock loops,tac variation,general circuit,data conflict time,leakage-current-reduction controller,detectors,leakage current,delay lock loop,through silicon via,chip
Conference
0193-6530
ISBN
Citations 
PageRank 
978-1-4673-0376-7
2
0.37
References 
Authors
10
11
Name
Order
Citations
PageRank
Hyun-Woo Lee116243.02
Soo-Bin Lim261.33
Junyoung Song34011.42
Jabeom Koo4417.72
Dae-Han Kwon550.81
Jong-Ho Kang6111.12
Yunsaing Kim7395.45
Young-Jung Choi8639.75
Kunwoo Park913614.51
Byongtae Chung10767.44
Chulwoo Kim1139774.58