Name
Title | ||
|---|---|---|
Look-Ahead Dynamic Threshold Voltage Control Scheme for Improving Write Margin of SOI-7T-SRAM |
Abstract | ||
|---|---|---|
Instability of SRAM memory cells derived from aggressive technology scaling has been recently one of the most significant issues. Although a 7T-SRAM cell with an area-tolerable separated read port improves read margins even at sub-1V, it unfortunately results in degradation of write margins. In order to assist the write operation, we address a new memory cell employing a look-ahead body-bias which dynamically controls the threshold voltage. Simulation results have shown improvement in both the write margins and access time without increasing the leakage power derived from the body-bias. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1093/ietfec/e90-a.12.2691 | IEICE Transactions |
Keywords | DocType | Volume |
look-ahead dynamic threshold voltage,significant issue,access time,aggressive technology scaling,new memory cell,threshold voltage,control scheme,simulation result,leakage power,look-ahead body-bias,sram memory cell,improving write margin,look ahead,sram | Journal | E90-A |
Issue | ISSN | Citations |
12 | 0916-8508 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masaaki Iijima | 1 | 13 | 4.68 |
| Kayoko Seto | 2 | 6 | 1.54 |
| Masahiro Numa | 3 | 82 | 20.87 |
| Akira Tada | 4 | 14 | 4.40 |
| Takashi Ipposhi | 5 | 13 | 5.97 |