Name
Abstract | ||
|---|---|---|
Thermal Laser Stimulation (TLS) has become a powerful technique for defect location in the metallic elements of ICs. In this paper we will extend its application to reliability defect monitoring. Two different methods derived from Thermal Laser Stimulation are applied: OBIRCH/TIVA on biased and SEI on unbiased test structures (TEGs). Our experimental results show that both have some advantages for precise defect location. The TLS signature can also provide insight on the defect physical nature. (C) 2002 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(02)00221-4 | Microelectronics Reliability |
Field | DocType | Volume |
Electronic engineering,Thermal laser stimulation,Engineering,Optoelectronics | Journal | 42 |
Issue | ISSN | Citations |
9 | 0026-2714 | 2 |
PageRank | References | Authors |
0.76 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Beaudoin | 1 | 5 | 2.64 |
| G. Haller | 2 | 4 | 1.82 |
| P. Perdu | 3 | 60 | 27.38 |
| R. Desplats | 4 | 40 | 15.34 |
| T. Beauchêne | 5 | 3 | 2.40 |
| D. Lewis | 6 | 21 | 9.42 |