Abstract | ||
---|---|---|
In this paper, device degradation mechanisms by drain junction reverse current in the off-state were studied, using n-type metal–oxide–semiconductor field-effect transistor (N-MOSFET), which is used as the high-voltage core circuit of flash memory chip. Components of drain leakage currents in the off-state are gate-induced drain-leakage (GIDL) and drain junction reverse currents. Device degradation phenomenon and mechanism by GIDL in the MOSFETs have been well known, but those by drain junction reverse current have not. A variety of measurement conditions for separating drain junction reverse current from total drain current in the off-state were suggested, and hole injection phenomenon into the gate was investigated through the modified capacitive-voltage method. In addition, we investigated the location of electron–hole generation between GIDL and drain junction reverse current through the lateral profile of trapped hole extracted from charge pumping method. |
Year | DOI | Venue |
---|---|---|
2013 | 10.1016/j.microrel.2013.04.006 | Microelectronics Reliability |
Field | DocType | Volume |
Reverse leakage current,Flash memory,Leakage (electronics),Reverse current,Degradation (geology),Electronic engineering,Engineering,Transistor,Drain current,Drain-induced barrier lowering | Journal | 53 |
Issue | ISSN | Citations |
7 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 2 | 8 |
Name | Order | Citations | PageRank |
---|---|---|---|
K. S. Kim | 1 | 0 | 0.34 |
H. J. Kim | 2 | 0 | 0.34 |
P. H. Choi | 3 | 0 | 0.34 |
H. S. Park | 4 | 114 | 11.21 |
I. H. Joo | 5 | 0 | 0.34 |
JooSeok Song | 6 | 306 | 58.82 |
D. H. Song | 7 | 24 | 2.47 |
B. D. Choi | 8 | 73 | 12.12 |