Name
Title | ||
|---|---|---|
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements |
Abstract | ||
|---|---|---|
High field electrical stress effects on the mid-gap interface trap density (Dit0) and geometric mean capture cross sections (σ0) in n-MOSFETs have been studied using the pulsed interface probing method. The results show that the PIP technique is sensitive to changes in mid-gap trap cross section values caused by the Fowler–Nordheim (F–N) electrical stress. The decrease of mid-gap trap cross sections following the F–N tunneling injection is found. Our works also provide further insight into the influence of electrical stress on mid-gap interface trap generation in n-MOSFETs without the assumption of the constant capture cross section value during F–N stresses. |
Year | DOI | Venue |
|---|---|---|
2004 | 10.1016/S0026-2714(03)00161-6 | Microelectronics Reliability |
Keywords | Field | DocType |
geometric mean,cross section | Quantum tunnelling,Stress effects,Atomic physics,Chemistry,Trap density,Electronic engineering,High field | Journal |
Volume | Issue | ISSN |
44 | 1 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hyuck In Kwon | 1 | 0 | 1.35 |
| In Man Kang | 2 | 0 | 2.70 |
| Byung-Gook Park | 3 | 7 | 14.38 |
| Jong Duk Lee | 4 | 6 | 5.16 |
| Sang Sik Park | 5 | 0 | 0.34 |
| Jung Chak Ahn | 6 | 0 | 1.01 |
| Yong Hee Lee | 7 | 46 | 7.09 |