Title
Resistive Bridge Fault Model Evolution from Conventional to Ultra Deep Submicron Technologies
Abstract
We present three resistive bridging fault models valid for different CMOS technologies. The models are partitioned into a general framework (which is shared by all three models) and a technology-specific part. The first model is based on Shockley equations and is valid for conventional but not deep submicron CMOS. The second model is obtained by fitting SPICE data. The third resistive bridging fault model uses Berkeley Predictive Technology Model and BSIM4; it is valid for CMOS technologies with feature sizes of 90nm and below, accurately describing non-trivial electrical behavior in that technologies. Experimental results for ISCAS circuits show that the test patterns obtained for the Shockley model are still valid for the Fitted model, but lead to coverage loss under the Predictive model.
Year
DOI
Venue
2005
10.1109/VTS.2005.72
VTS
Keywords
DocType
ISSN
resistive bridging faults,shockley equation,fitted model,berkeley predictive technology model,deep submicron technology modeling,coverage loss,iscas circuit,different cmos technology,shockley model,ultra deep submicron technologies,fault model,resistive bridge fault model,predictive model,cmos technology,prediction model
Conference
1093-0167
ISBN
Citations 
PageRank 
0-7695-2314-5
5
0.45
References 
Authors
14
6
Name
Order
Citations
PageRank
Ilia Polian188978.66
Sandip Kundu21103137.18
Jean-Marc Galliere351.47
Piet Engelke429616.11
Michel Renovell574996.46
Bernd Becker685573.74