Name
Abstract | ||
|---|---|---|
This paper proposes a novel ultra-low voltage and high speed Schmitt trigger circuit designed in silicon-on-insulator (SOI) technology. The proposed circuit is designed using dynamic threshold MOS (DTMOS) technique and multi-threshold voltage CMOS (MT-CMOS) technique to reduce power consumption and accomplish high speed operation. The experiment shows the proposed Schmitt trigger circuit consumes 4.68 mu W at 0.7V power supply voltage and the circuit demonstrates the maximum switching speed of 170 psec. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1587/elex.4.606 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
SOI, schmitt trigger, DTMOS, MTCMOS | Silicon on insulator,Switching time,Computer science,Schmitt trigger,Voltage,CMOS,Electronic engineering,Low voltage,MOSFET,Electrical engineering,Power consumption | Journal |
Volume | Issue | ISSN |
4 | 19 | 1349-2543 |
Citations | PageRank | References |
2 | 0.50 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kyung Ki Kim | 1 | 99 | 21.62 |
| Yong-bin Kim | 2 | 338 | 55.72 |