Name
Title | ||
|---|---|---|
Stacking magnetic random access memory atop microprocessors: an architecture-level evaluation. |
Abstract | ||
|---|---|---|
Magnetic random access memory (MRAM) has been considered as a promising memory technology because of its attractive properties such as non-volatility, fast access, zero standby leakage and high density. Although integrating MRAM with complementary metal-oxide-semiconductor (CMOS) logic may incur extra manufacturing cost because of the hybrid magnetic-CMOS fabrication process, it is feasible and co... |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1049/iet-cdt.2009.0091 | IET Computers & Digital Techniques |
Keywords | Field | DocType |
CMOS memory circuits,microprocessor chips,MRAM devices,SRAM chips | Dynamic random-access memory,Dram,Computer science,CPU cache,Parallel computing,Static random-access memory,Magnetoresistive random-access memory,Non-volatile memory,Magnetic storage,Embedded system,Random access | Journal |
Volume | Issue | ISSN |
5 | 3 | 1751-8601 |
Citations | PageRank | References |
4 | 0.44 | 4 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiangyu Dong | 1 | 1367 | 69.48 |
| Xiaoxia Wu | 2 | 535 | 38.61 |
| Yuan Xie | 3 | 6430 | 407.00 |
| Yiran Chen | 4 | 3344 | 259.09 |
| Hai Li | 5 | 2435 | 208.37 |