Name
Abstract | ||
|---|---|---|
In this work we present new ESD protections structures, compatible with the in BCD5 smart power technology, based on an optimization of the "Big-Clamp" approach. By adopting dedicated Vdd and Vss ESD rails and by replacing the standard diodes with two BJTs, adequately connected to the Vdd and Vss ESD rails, we have obtained ESD robustness in excess of 8KV HBM for 5V supply voltage structures. By adopting a suitable "Darlington"-LDMOS we have obtained 7 kV and 4 kV HBM threshold for ESD protection structures suitable for 20 V and 40 V supply voltages respectively. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00188-3 | Microelectronics Reliability |
Field | DocType | Volume |
Smart power,Systems engineering,Engineering,Electrical engineering,Reliability engineering | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 1 |
PageRank | References | Authors |
0.48 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| L. Sponton | 1 | 1 | 1.50 |
| L. Cerati | 2 | 1 | 1.50 |
| G. Croce | 3 | 1 | 0.82 |
| F. Chrappan | 4 | 1 | 0.48 |
| C. Contiero | 5 | 1 | 0.48 |
| G. Meneghesso | 6 | 52 | 22.83 |
| E. Zanoni | 7 | 13 | 7.01 |