Title
High performance CMOS circuit by using charge recycling active body-bias controlled SOI
Abstract
In this paper, we propose a new technique for higher circuit speed without increase in leakage current by using active body-bias controlling technique. Conventional body-bias controlling techniques face difficulties, such as long transition time of body voltage and large area penalty. To overcome these issues, we propose a Charge Recycling Active Body-bias Controlled (CRABC) circuit scheme on SOI which enables quick control of body voltage by using simple additional circuit. The SPICE simulation results have shown that CRABC shortens delay time by 20 %, and transition time for controlling body-bias by 98 %.
Year
DOI
Venue
2006
10.1007/11847083_38
PATMOS
Keywords
Field
DocType
high performance cmos circuit,crabc shortens delay time,circuit scheme,active body-bias,conventional body-bias,higher circuit speed,simple additional circuit,transition time,long transition time,body voltage,new technique,leakage current
Silicon on insulator,Logic gate,Leakage (electronics),Standby power,Computer science,Spice,Voltage,CMOS,Electronic engineering,Diffusion capacitance,Electrical engineering
Conference
Volume
ISSN
ISBN
4148
0302-9743
3-540-39094-4
Citations 
PageRank 
References 
1
0.41
3
Authors
7
Name
Order
Citations
PageRank
Masayuki Kitamura121.47
Masaaki Iijima2134.68
Kenji Hamada310.75
Masahiro Numa48220.87
Hiromi Notani571.80
Akira Tada6144.40
Shigeto Maegawa741.70