Title | ||
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High performance CMOS circuit by using charge recycling active body-bias controlled SOI |
Abstract | ||
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In this paper, we propose a new technique for higher circuit speed without increase in leakage current by using active body-bias controlling technique. Conventional body-bias controlling techniques face difficulties, such as long transition time of body voltage and large area penalty. To overcome these issues, we propose a Charge Recycling Active Body-bias Controlled (CRABC) circuit scheme on SOI which enables quick control of body voltage by using simple additional circuit. The SPICE simulation results have shown that CRABC shortens delay time by 20 %, and transition time for controlling body-bias by 98 %. |
Year | DOI | Venue |
---|---|---|
2006 | 10.1007/11847083_38 | PATMOS |
Keywords | Field | DocType |
high performance cmos circuit,crabc shortens delay time,circuit scheme,active body-bias,conventional body-bias,higher circuit speed,simple additional circuit,transition time,long transition time,body voltage,new technique,leakage current | Silicon on insulator,Logic gate,Leakage (electronics),Standby power,Computer science,Spice,Voltage,CMOS,Electronic engineering,Diffusion capacitance,Electrical engineering | Conference |
Volume | ISSN | ISBN |
4148 | 0302-9743 | 3-540-39094-4 |
Citations | PageRank | References |
1 | 0.41 | 3 |
Authors | ||
7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Masayuki Kitamura | 1 | 2 | 1.47 |
Masaaki Iijima | 2 | 13 | 4.68 |
Kenji Hamada | 3 | 1 | 0.75 |
Masahiro Numa | 4 | 82 | 20.87 |
Hiromi Notani | 5 | 7 | 1.80 |
Akira Tada | 6 | 14 | 4.40 |
Shigeto Maegawa | 7 | 4 | 1.70 |