Title
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure
Abstract
The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a graded collector region, multiple TLP or HBM stresses result in different types of defects. OBIC techniques and TCAD simulations are used to thoroughly analyze the involved physical mechanisms.
Year
DOI
Venue
2005
10.1016/j.microrel.2005.07.030
Microelectronics Reliability
Field
DocType
Volume
Human-body model,Electric stress,Electrostatic discharge,Computer Aided Design,Electronic engineering,Bipolar junction transistor,Engineering
Journal
45
Issue
ISSN
Citations 
9
0026-2714
0
PageRank 
References 
Authors
0.34
0
9
Name
Order
Citations
PageRank
N. Guitard143.07
F. Essely241.95
David Trémouilles3138.69
M. Bafleur400.34
N. Nolhier574.77
P. Perdu66027.38
A. Touboul732.03
V. Pouget85111.38
D. Lewis9219.42