Title | ||
---|---|---|
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure |
Abstract | ||
---|---|---|
The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a graded collector region, multiple TLP or HBM stresses result in different types of defects. OBIC techniques and TCAD simulations are used to thoroughly analyze the involved physical mechanisms. |
Year | DOI | Venue |
---|---|---|
2005 | 10.1016/j.microrel.2005.07.030 | Microelectronics Reliability |
Field | DocType | Volume |
Human-body model,Electric stress,Electrostatic discharge,Computer Aided Design,Electronic engineering,Bipolar junction transistor,Engineering | Journal | 45 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 9 |
Name | Order | Citations | PageRank |
---|---|---|---|
N. Guitard | 1 | 4 | 3.07 |
F. Essely | 2 | 4 | 1.95 |
David Trémouilles | 3 | 13 | 8.69 |
M. Bafleur | 4 | 0 | 0.34 |
N. Nolhier | 5 | 7 | 4.77 |
P. Perdu | 6 | 60 | 27.38 |
A. Touboul | 7 | 3 | 2.03 |
V. Pouget | 8 | 51 | 11.38 |
D. Lewis | 9 | 21 | 9.42 |