Name
Title | ||
|---|---|---|
Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices |
Abstract | ||
|---|---|---|
Failure analysis of GaAs packaged devices is generally more challenging than that of their silicon counterparts. The use of Benzocyclobutene (BCB) as a dielectric material unable the application of chemicals for front-side decapsulation. Since the GaAs substrate is transparent to near infrared, optical backside defect localization techniques, developed for Si technologies, can also be applied. Two different case studies which makes use of backside preparation and fault localization techniques such as Emission Microscopy and backside Thermal Laser Stimulation (OBIRCH/TIVA) are presented. Furthermore, techniques such as FIB, SEM and delayering are used for the revelation of defects. (C) 2002 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(02)00194-4 | Microelectronics Reliability |
Keywords | Field | DocType |
gallium arsenide | Gallium arsenide,Electronic engineering,Engineering,Optoelectronics | Journal |
Volume | Issue | ISSN |
42 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Beaudoin | 1 | 5 | 2.64 |
| D. Carisetti | 2 | 11 | 6.79 |
| R. Desplats | 3 | 40 | 15.34 |
| P. Perdu | 4 | 60 | 27.38 |
| D. Lewis | 5 | 21 | 9.42 |
| J.C. Clement | 6 | 0 | 0.34 |