Name
Title | ||
|---|---|---|
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors |
Abstract | ||
|---|---|---|
We studied the degradation of AlGaN/GaN High Electron Mobility Transistors (HEMT) after 2-MeV alpha irradiation for two different fluences, namely 1013α/cm2 and 1014α/cm2. After the exposure and depending on the irradiation fluence, we observed a drop both in drain current and transconductance, and a reduction in the leakage current of the gate diode. We attributed these effects to bulk damage, radiation-induced formation of deep-level trap sites in the channel layer, and doping compensation/removal in the barrier layer. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1016/j.microrel.2006.07.066 | Microelectronics Reliability |
Keywords | Field | DocType |
leakage current,high electron mobility transistor | Leakage (electronics),Doping,Irradiation,Chemistry,Barrier layer,Electronic engineering,Transconductance,High-electron-mobility transistor,Electron mobility,Fluence | Journal |
Volume | Issue | ISSN |
46 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Francesca Danesin | 1 | 4 | 1.77 |
| F. Zanon | 2 | 4 | 1.44 |
| S. Gerardin | 3 | 31 | 6.60 |
| F. Rampazzo | 4 | 2 | 1.18 |
| G. Meneghesso | 5 | 52 | 22.83 |
| E. Zanoni | 6 | 13 | 7.01 |
| A. Paccagnella | 7 | 61 | 10.38 |