Title
Application Of The Compact Channel Thermal Noise Model Of Short Channel Mosfets To Cmos Rfic Design
Abstract
In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nut and 130 nm CMOS technologies, respectively.
Year
DOI
Venue
2009
10.1587/transele.E92.C.627
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
CMOS, channel thermal noise, radio frequency integrated circuit (RFIC), low noise amplifier (LNA), noise figure
Low-noise amplifier,Noise (electronics),Noise figure,Velocity saturation,Electronic engineering,CMOS,Integrated circuit design,RFIC,Engineering,Electrical engineering,Integrated circuit
Journal
Volume
Issue
ISSN
E92C
5
1745-1353
Citations 
PageRank 
References 
0
0.34
1
Authors
5
Name
Order
Citations
PageRank
Jongwook Jeon100.68
Ickhyun Song212612.14
Jong Duk Lee365.16
Byung-Gook Park4714.38
Hyungcheol Shin5268.64