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HYUNGCHEOL SHIN
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Name
Affiliation
Papers
HYUNGCHEOL SHIN
Korea Adv Inst Sci & Technol, Daejeon, South Korea
16
Collaborators
Citations
PageRank
39
26
8.64
Referers
Referees
References
105
84
12
Search Limit
100
105
Publications (16 rows)
Collaborators (39 rows)
Referers (100 rows)
Referees (84 rows)
Title
Citations
PageRank
Year
28.2 A 51dB-SNR 120Hz-Scan-Rate 32×18 Segmented-VCOM LCD In-Cell Touch-Display-Driver IC with 96-Channel Compact Shunt-Sensing Self-Capacitance Analog Front-End.
0
0.34
2020
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models
0
0.34
2020
Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories
0
0.34
2020
12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels
6
0.90
2014
L-Shaped Tunneling Field-Effect Transistors For Complementary Logic Applications
0
0.34
2013
A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique
15
2.21
2013
The novel SCR-based ESD protection with low triggering and high holding voltages
0
0.34
2011
Simulation Study On Dependence Of Channel Potential Self-Boosting On Device Scale And Doping Concentration In 2-D And 3-D Nand-Type Flash Memory Devices
0
0.34
2010
Application Of The Compact Channel Thermal Noise Model Of Short Channel Mosfets To Cmos Rfic Design
0
0.34
2009
Design Consideration For Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (Gibl)
0
0.34
2009
3-Dimensional Terraced Nand (3d Tnand) Flash Memory-Stacked Version Of Folded Nand Array
0
0.34
2009
Simulation Of Retention Characteristics In Double-Gate Structure Multi-Bit Songs Flash Memory
0
0.34
2009
Fn Stress Induced Degradation On Random Telegraph Signal Noise In Deep Submicron Nmosfets
0
0.34
2008
Establishing Read Operation Bias Schemes For 3-D Pillar Structure Flash Memory Devices To Overcome Paired Cell Interference (Pci)
3
0.93
2008
Accurate Extraction Of The Trap Depth From Rts Noise Data By Including Poly Depletion Effect And Surface Potential Variation In Mosfets
2
0.54
2007
Analyses On Current Characteristics Of 3-D Mosfet Determined By Junction Doping Profiles For Nonvolatile Memory Devices
0
0.34
2007
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