Name
Title | ||
|---|---|---|
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications |
Abstract | ||
|---|---|---|
This paper discusses on hot-carrier methodologies for SiGe HBTs. First, it reveals comparable behaviors for Si and SiGe NPN bipolar transistors, allowing to have similar reliability approach for these devices. Second, while in an industrial environment accelerated wafer level tests are commonly used, it is shown that long-term package level tests could be mandatory as new failure modes are detected at low field. Finally, a general qualification procedure has been developed and applied, demonstrating in particular a high reliability level for the considered SiGe NPN HBTs without a significant impact of the Ge introduction process. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00203-7 | Microelectronics Reliability |
Field | DocType | Volume |
Electronic engineering,Extrapolation,Engineering,Hot carrier reliability,Reliability engineering | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 2 |