Title
Power delivery design for 3-D ICs using different through-silicon via (TSV) technologies
Abstract
3-D integrated circuits promise high bandwidth, low latency, low device power, and a small form factor. Increased device density and asymmetrical packaging, however, renders the design of 3-D power delivery a challenge. We investigate in this paper various methods to improve 3-D power delivery. We analyze the impact of through-silicon via (TSV) size and spacing, of controlled collapse chip connection (C4) spacing, and of dedicated power delivery TSVs. In addition to considering typical cylindrical or square metal-filled TSVs (core TSVs), we also investigate using coaxial TSVs for power delivery resulting in reduced routing blockages and added coupling capacitance. Our 3-D evaluation system is composed of a quad-core chip multiprocessor, a memory die, and an accelerator engine, and it is evaluated using representative SPEC benchmark traces. This is the first detailed architectural-level analysis for 3-D power delivery. Our findings provide clear guidelines for 3-D power delivery design. More importantly, we show that it is possible to achieve 2-D-like, or even better, power quality by increasing C4 granularity and by selecting suitable TSV size and spacing.
Year
DOI
Venue
2011
10.1109/TVLSI.2009.2038165
IEEE Trans. VLSI Syst.
Keywords
Field
DocType
3-d integrated circuit,different through-silicon,3-d ics,coaxial tsvs,power quality,core tsvs,3-d evaluation system,low device power,3-d power delivery design,power delivery,dedicated power delivery tsvs,3-d power delivery,integrated circuit design,three dimensional,integrated circuit,3d ic,tsv,through silicon via,integrated circuit packaging,low latency,capacitance,chip,low power electronics,routing,bandwidth,form factor
Small form factor,Computer science,Integrated circuit packaging,Electronic engineering,Chip,Through-silicon via,Integrated circuit design,Three-dimensional integrated circuit,Electrical engineering,Integrated circuit,Low-power electronics
Journal
Volume
Issue
ISSN
19
4
1063-8210
Citations 
PageRank 
References 
26
1.37
18
Authors
3
Name
Order
Citations
PageRank
Nauman H. Khan1584.21
Syed M. Alam217620.47
Soha Hassoun3535241.27