Name
Abstract | ||
|---|---|---|
Thermal laser stimulation (OBIRCH, TIVA) is shown to be a valuable method for localizing current leakage from the front or backside of the silicon die. Its usefulness in a failure analysis laboratory is illustrated through several different case studies on silicon IC devices that presented an abnormal leakage current. The thermal laser stimulation method has been able to detect current leakage defect in the IC's metallic elements as well as in its polysilicon, oxide and silicon layers. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00167-6 | Microelectronics Reliability |
Field | DocType | Volume |
Leakage (electronics),Electronic engineering,Engineering,Thermal laser stimulation | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 3 |
PageRank | References | Authors |
1.05 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| R. Desplats | 1 | 40 | 15.34 |
| F. Beaudoin | 2 | 20 | 10.73 |
| P. Perdu | 3 | 60 | 27.38 |
| P. Poirier | 4 | 3 | 1.05 |
| David Trémouilles | 5 | 13 | 8.69 |
| M. Bafleur | 6 | 3 | 1.05 |
| D. Lewis | 7 | 21 | 9.42 |