Name
Abstract | ||
|---|---|---|
In failure analysis laboratories, defects are localized in two-dimensional (x,y) mapping with advanced tools. However, these tools do not provide insight into the defect or into the material involved. We introduce here a methodology, based on the Temperature Coefficient of Resistance (TCR) parameter characterization, which allows distinguishing front-end level defects from the back-end level defects. The z localization obtained from this methodology helps to determine the best failure analysis flow. (C) 2003 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00275-0 | Microelectronics Reliability |
Field | DocType | Volume |
T-cell receptor,Electronic engineering,Engineering,Reliability engineering | Journal | 43 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Firiti | 1 | 1 | 1.53 |
| D. Faujour | 2 | 0 | 0.34 |
| G. Haller | 3 | 0 | 0.34 |
| J.M. Moragues | 4 | 1 | 0.76 |
| Vincent Goubier | 5 | 6 | 2.80 |
| P. Perdu | 6 | 60 | 27.38 |
| F. Beaudoin | 7 | 20 | 10.73 |
| D. Lewis | 8 | 36 | 8.96 |