Name
Title | ||
|---|---|---|
Simulation Of Retention Characteristics In Double-Gate Structure Multi-Bit Songs Flash Memory |
Abstract | ||
|---|---|---|
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONGS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the V-T shift as a function of trapped charge density, time, silicon fin thickness and type of trapped charge, and can be used for optimizing the ONO geometry and parameters for maximum performance. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/transele.E92.C.659 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
SONOS, flash memory, nitride-based charge trap memory, retention, multi-bit, double gate | Tunnel effect,Quantum tunnelling,Nanoelectronics,Flash memory,Electronic engineering,Non-volatile memory,Engineering,Integrated circuit,Silicon,Charge density | Journal |
Volume | Issue | ISSN |
E92C | 5 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Doo-Hyun Kim | 1 | 155 | 33.21 |
| Il-Han Park | 2 | 40 | 6.31 |
| Seongjae Cho | 3 | 6 | 7.70 |
| Jong Duk Lee | 4 | 6 | 5.16 |
| Hyungcheol Shin | 5 | 26 | 8.64 |
| Byung-Gook Park | 6 | 7 | 14.38 |