Name
Title | ||
|---|---|---|
Correlation verification between transistor variability model with body biasing and ring oscillation frequency in 90nm subthreshold circuits |
Abstract | ||
|---|---|---|
This paper presents modeling of manufacturing variability and body bias effect for subthreshold circuits based on measurement of a device array circuit in a 90 nm technology. The device array consists of P/NMOS transistors and ring oscillators. This work verifies the correlation between the variation model extracted from IV measurement results and oscillation frequencies, which means the transistor-level variation model is examined and confirmed in terms of circuit performance. We demonstrate that delay variations of subthreshold circuits are well characterized with two parameters - threshold voltage and subthreshold swing parameter. We reveal that body bias effect is a less statistical phenomenon and threshold voltage shift by body biasing can be modeled deterministically. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1145/1393921.1393929 | Low Power Electronics and Design |
Keywords | Field | DocType |
body biasing,oscillation frequency,circuit performance,transistor variability model,threshold voltage,iv measurement result,subthreshold swing parameter,correlation verification,body bias effect,device array circuit,delay variation,device array,subthreshold circuit,correlation,oscillations,nanoelectronics,transistors,statistical analysis,ring oscillator,oscillators | Oscillation,NMOS logic,Subthreshold slope,Electronic engineering,Subthreshold conduction,MOSFET,Transistor,Threshold voltage,Biasing,Physics | Conference |
ISBN | Citations | PageRank |
978-1-60558-109-5 | 1 | 0.38 |
References | Authors | |
5 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hiroshi Fuketa | 1 | 99 | 15.37 |
| Masanori Hashimoto | 2 | 462 | 79.39 |
| Yukio Mitsuyama | 3 | 134 | 20.01 |
| Takao Onoye | 4 | 329 | 68.21 |