Name
Abstract | ||
|---|---|---|
This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2V, holding voltage of 3.3V, and the second breakdown current of 58mA/@mm. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.mejo.2011.04.009 | Microelectronics Journal |
Keywords | Field | DocType |
high holding voltage,esd protection,tcad simulation,proposed scr,latch-up immunity,electrical characteristic,electrostatic discharge,proposed device,dram process,conventional scr-based device,proposed scheme,high holding,silicon controlled rectifier,normal operator | Dram,Power network design,Electrostatic discharge,Voltage,Electronic engineering,Engineering,Electrical engineering,Silicon-controlled rectifier | Journal |
Volume | Issue | ISSN |
42 | 6 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Myounggon Kang | 1 | 9 | 5.59 |
| Ki-Whan Song | 2 | 58 | 9.66 |
| Byung-Gook Park | 3 | 7 | 14.38 |
| Hyungcheol Shin | 4 | 26 | 8.64 |