Title
A retention-aware test power model for embedded SRAM
Abstract
This paper addresses the test power model problem for embedded SRAMs (e-SRAMs). Previous researches treat e-SRAMs the same as other SoC core and use a "single-rectangle" power model to describe their test power consumption. This leads to significant waste of test time since e-SRAM test usually includes a long period of "zero" power consumption for the detection of Data Retention Faults. This paper takes advantage of this "zero" power period and proposes a "retention-aware" test power model for e-SRAMs. The proposed model is evaluated and its impact on test time reduction is reported for various scenarious in terms of retention test duration, memory capacities, test algorithm complexities, etc. A formula is derived to predict the maximum test time reduction when the "zero" power period is fully utilized in a SoC environment.
Year
DOI
Venue
2005
10.1145/1120725.1120935
ASP-DAC
Keywords
Field
DocType
maximum test time reduction,test time reduction,test time,test power model problem,retention-aware test power model,test power model,test algorithm complexity,retention test duration,test power consumption,embedded sram,e-sram test,power period,embedded systems,system on chip,scheduling
System on a chip,Data retention,Test algorithm,Scheduling (computing),Computer science,Electronic engineering,Static random-access memory,Power model,Real-time computing,Power consumption,Test power
Conference
ISSN
ISBN
Citations 
2153-6961
0-7803-8737-6
2
PageRank 
References 
Authors
0.38
15
4
Name
Order
Citations
PageRank
Baosheng Wang1627.37
Josh Yang2283.03
Yuejian Wu316417.13
André Ivanov419316.71