Name
Title | ||
|---|---|---|
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM |
Abstract | ||
|---|---|---|
In this work, the high lateral resolution of the Atomic Force Microscope (AFM) related techniques has been used to investigate the progressiveness of the breakdown event (BD) at a nanometer scale on thin (2.9 and 4.2 nm) gate oxides. In particular, the contribution of the oxide conductivity (at the position where BD is initially triggered) to the overall post-BD conduction of the spot has been analysed. The results show that this parameter plays an important role in the gradual increase of the post-BD gate current during the progressive breakdown. (C) 2003 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00266-X | Microelectronics Reliability |
Field | DocType | Volume |
Conductivity,Composite material,Oxide,Atomic force microscopy,Electronic engineering,Engineering | Journal | 43 |
Issue | ISSN | Citations |
9 | 0026-2714 | 1 |
PageRank | References | Authors |
0.45 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Porti | 1 | 5 | 3.78 |
| M. Nafrı́a | 2 | 1 | 0.45 |
| X. Aymerich | 3 | 21 | 12.21 |