Name
Abstract | ||
|---|---|---|
The long term stability of M-HEMTs has been evaluated by means of hot electrons stress test carried out at high ambient temperature. Devices demonstrate a good stability under high temperature thermal storage (T = 200 degreesC) or hot electron stress test at room temperature. Moreover, under very severe stress conditions (hot electron stress test at very high temperature), devices show large degradation in the I-V characteristics i.e. positive threshold voltage shift, a degradation of the gate Schottky diode, and increase of the parasitic drain resistance. The degradation are activated by both high temperature and high electric field. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00189-5 | Microelectronics Reliability |
Field | DocType | Volume |
Electronic engineering,Engineering,High-electron-mobility transistor,Optoelectronics,Indium phosphide | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 1 |
PageRank | References | Authors |
0.56 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Meneghesso | 1 | 52 | 22.83 |
| Alessandro Chini | 2 | 43 | 13.88 |
| E. Zanoni | 3 | 13 | 7.01 |