Title
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme.
Year
DOI
Venue
2012
10.1109/ISSCC.2012.6176868
ISSCC
Keywords
Field
DocType
computer architecture,cmos integrated circuits,cyclic redundancy check,error detection
Dram,Voltage reduction,Memory bandwidth,Computer science,Cyclic redundancy check,DDR4 SDRAM,Error detection and correction,Electronic engineering,Bandwidth (signal processing),Jitter,Embedded system
Conference
Citations 
PageRank 
References 
9
0.71
5
Authors
28
Name
Order
Citations
PageRank
Kyomin Sohn1295.15
Taesik Na28512.26
Indal Song3183.56
Yong Shim4162.45
Wonil Bae5161.79
Sanghee Kang6172.87
Dong-Su Lee7203.37
Hangyun Jung8141.42
Hanki Jeoung9151.80
Ki Won Lee10183.16
Junsuk Park11111.12
Jongeun Lee1242933.71
Byunghyun Lee13293.46
Inwoo Jun14141.42
Juseop Park15141.42
Junghwan Park16141.76
Hundai Choi17172.51
S. Kim1827023.89
Haeyoung Chung19141.76
Young Choi20141.76
Dae-Hee Jung21141.76
Jang Seok Choi2290.71
Byung-Sick Moon23121.51
Junghwan Choi2427933.08
Byungchul Kim25263.86
Seong-jin Jang269927.16
Joo-Sun Choi2724629.16
Kyungseok Oh28282.82