Title | ||
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Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. |
Abstract | ||
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Bulk Built-In Current Sensors (BBICSS) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one BBICS architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor NMOS transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cos to offset it. Further, we introduce a new sacs architecture well suited for triple-well that offers high detection sensitivity and low area overhead. (C) 2014 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
---|---|---|
2014 | 10.1016/j.microrel.2014.07.151 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
Bulk Built-In Current Sensor,Single event effect,Triple-well CMOS,Laser,Transient current | Single event effect,NMOS logic,Experimental testing,CMOS,Electronic engineering,Engineering,Transistor,Electrical engineering,Integrated circuit,Offset (computer science),Ionizing particles | Journal |
Volume | Issue | ISSN |
54 | SP9-10 | 0026-2714 |
Citations | PageRank | References |
13 | 0.71 | 4 |
Authors | ||
7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Jean-Max Dutertre | 1 | 313 | 29.14 |
Rodrigo Possamai Bastos | 2 | 80 | 13.80 |
Olivier Potin | 3 | 38 | 3.59 |
Marie-Lise Flottes | 4 | 366 | 45.31 |
Bruno Rouzeyre | 5 | 456 | 49.44 |
Giorgio Di Natale | 6 | 368 | 54.26 |
Alexandre Sarafianos | 7 | 68 | 6.96 |