Title
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS.
Abstract
Bulk Built-In Current Sensors (BBICSS) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one BBICS architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor NMOS transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cos to offset it. Further, we introduce a new sacs architecture well suited for triple-well that offers high detection sensitivity and low area overhead. (C) 2014 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2014
10.1016/j.microrel.2014.07.151
MICROELECTRONICS RELIABILITY
Keywords
Field
DocType
Bulk Built-In Current Sensor,Single event effect,Triple-well CMOS,Laser,Transient current
Single event effect,NMOS logic,Experimental testing,CMOS,Electronic engineering,Engineering,Transistor,Electrical engineering,Integrated circuit,Offset (computer science),Ionizing particles
Journal
Volume
Issue
ISSN
54
SP9-10
0026-2714
Citations 
PageRank 
References 
13
0.71
4
Authors
7
Name
Order
Citations
PageRank
Jean-Max Dutertre131329.14
Rodrigo Possamai Bastos28013.80
Olivier Potin3383.59
Marie-Lise Flottes436645.31
Bruno Rouzeyre545649.44
Giorgio Di Natale636854.26
Alexandre Sarafianos7686.96