Name
Abstract | ||
|---|---|---|
A 3D technology is used to design ESD protection devices. These planar bidirectional components, based on back-to-back diodes, are dedicated to first stage, external ESD protection. The main feature consists in using deep micro-holes, usually dedicated to the manufacturing of high-value capacitors, to design 3D diode. Two different layouts have been studied and one of them is the improvement of the other one. These devices present an unexpected behavior when they are submitted at cumulative ESD stress. Failure mechanisms are not the same and we propose an optimized configuration based on deep trenches that improves cumulative ESD stress robustness. (C) 2014 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2014.07.136 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
ESD,Back-to-back diode,Trench,Well | Capacitor,Diode,Electronic engineering,Robustness (computer science),Planar,Trench,Engineering,Electrical engineering | Journal |
Volume | Issue | ISSN |
54 | SP9-10 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Bertrand Courivaud | 1 | 0 | 0.34 |
| Nicolas Nolhier | 2 | 4 | 2.28 |
| Gilles Ferru | 3 | 0 | 0.34 |
| M. Bafleur | 4 | 7 | 7.06 |
| Fabrice Caignet | 5 | 79 | 7.99 |