Name
Title | ||
|---|---|---|
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. |
Abstract | ||
|---|---|---|
•NBTI in p-MOSFETs is modeled using mutually uncorrelated trap generation and trapping.•The model explains DC and AC NBTI experiments in different SiON and HKMG devices.•Time evolution of NBTI degradation and recovery during and after stress can be modeled.•Impact of stress and recovery bias, temperature, frequency and duty cycle can be modeled.•Trap generation and trapping sub components are verified using independent experiments. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2013.12.017 | Microelectronics Reliability |
Field | DocType | Volume |
Duty cycle,Pulse frequency,Uncorrelated,Pulse (signal processing),Degradation (geology),Electronic engineering,Time evolution,Trapping,Engineering,Gate stack | Journal | 54 |
Issue | ISSN | Citations |
3 | 0026-2714 | 8 |
PageRank | References | Authors |
1.42 | 7 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| N. Goel | 1 | 12 | 1.92 |
| K. Joshi | 2 | 8 | 1.42 |
| S. Mukhopadhyay | 3 | 8 | 1.42 |
| N. Nanaware | 4 | 8 | 1.42 |
| S. Mahapatra | 5 | 8 | 1.76 |