Name
Abstract | ||
|---|---|---|
This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier comprises a boosted-gate nMOS and negative-resistance pMOSes as loads, which maximizes the readout margin. The STT-MRAM achieves a cycle time of 1.9 μs (= 0.526 MHz) at 0.38 V. The operating power is 1.70 μW at that voltage. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/ASPDAC.2015.7058920 | ASP-DAC |
Field | DocType | Citations |
Sense amplifier,NMOS logic,Computer science,Voltage,Negative resistance,Magnetoresistive random-access memory,Electronic engineering,Low voltage,Spin-transfer torque,Electrical engineering,Random access | Conference | 2 |
PageRank | References | Authors |
0.37 | 1 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yohei Umeki | 1 | 2 | 1.72 |
| Koji Yanagida | 2 | 16 | 4.70 |
| Shusuke Yoshimoto | 3 | 30 | 12.56 |
| Shintaro Izumi | 4 | 82 | 31.56 |
| masahiko yoshimoto | 5 | 117 | 34.06 |
| Hiroshi Kawaguchi | 6 | 37 | 21.08 |
| Koji Tsunoda | 7 | 2 | 1.04 |
| T. Sugii | 8 | 21 | 4.18 |