Paper Info
Title
Stability characterization of high-performance PureB Si-photodiodes under aggressive cleaning treatments in industrial applications
Abstract
In industrial applications, particularly in vacuum ultraviolet applications and low-energy electron detection systems, a periodic surface cleaning of the used photon/electron detectors is required to prevent the buildup of carbon contaminating layers [1-3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation extreme-ultraviolet (EUV) lithography and highresolution Scanning Electron Microscopes (SEMs). One effective way to remove the carbon contamination is to use aggressive gasses, such as hydrogen radicals (H∗) and oxygen plasma [1-3]. In previous publications we have reported the excellent optical and electrical performance of silicon-based PureB photodiodes produced by high-temperature (HT, 700ºC) pure boron chemical vapor deposition (CVD) [12-16]. Also the stability of these HT PureB photodiodes under hydrogen radicals cleaning and oxygen plasma cleaning is reported [4, 5]. Recently, a low-temperature (LT, 400ºC) PureB CVD process has been introduced, which is fully CMOS compatible [17]. In this work, a review study is presented of the effect of detrimental environment, particularly related to H∗ and oxygen plasma cleaning, on the performance of the both HT and LT PureB-diodes.
Year
DOI
Venue
2015
10.1109/ICIT.2015.7125599
Industrial Technology
Keywords
Field
DocType
carbon contamination,chemical vapor deposition,low-energy electron detection,pure-boron,silicon photodiodes,ultra-shallow junction,ultraviolet radiation,photodiodes,contamination,carbon,detectors
Extreme ultraviolet lithography,Hydrogen,Boron,Lithography,Engineering,Optoelectronics,Silicon,Photodiode,Ultraviolet,Chemical vapor deposition
Conference
Citations 
PageRank 
References 
1
0.63
1
Authors
5
Name
Order
Citations
PageRank
Vahid Mohammadi1265.04
Liwei Shi2349.24
u kroth310.63
christian laubis410.63
Stoyan Nihtianov58018.83