Name
Abstract | ||
|---|---|---|
The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course. sufficient simulation accuracy, Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed, Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 mum MOSFET technology node. |
Year | Venue | Keywords |
|---|---|---|
2002 | IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES | MOSFET model, surface potential, charge based modeling, sub-100nm technology |
DocType | Volume | Issue |
Journal | E85A | 4 |
ISSN | Citations | PageRank |
0916-8508 | 0 | 0.34 |
References | Authors | |
0 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mitiko Miura-Mattausch | 1 | 11 | 16.18 |
| Hiroaki Ueno | 2 | 1 | 1.08 |
| Hans Jürgen Mattausch | 3 | 0 | 1.01 |
| Shigetaka Kumashiro | 4 | 4 | 3.83 |
| Tetsuya Yamaguchi | 5 | 0 | 0.68 |
| Kyoji Yamashita | 6 | 1 | 1.74 |
| Noriaki Nakayama | 7 | 30 | 8.95 |