Name
Abstract | ||
|---|---|---|
Mobile Wide-I/O DRAMs are used in smartphones, tablets, handheld gaming consoles and other mobile devices. The main benefit of the Wide-I/O DRAM over its predecessors (such as LPDDRx DRAMs) is that it offers more bandwidth at lower power. In this paper, we propose a Wide-I/O DRAM built-in self-test design, named WIO-BIST including the local BIST (LO-BIST), global BIST (GL-BIST) and test interface structures, to support the fault detection in memory-die channels and TSVs. It should be noted that, a TSV test scheme is presented embedding the test procedure of TSVs into the memory-die channel test processes to significantly save the test time of TSVs. A logic die and 4 memory-dies stacking configuration is used to act as a dedicated circuit to demonstrate the feasibility of the proposed WIO-BIST design. Experimental results and comparisons show that the proposed WIO-BIST design has good performance in test time reduction with tiny extra area overhead penalty. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1007/s10836-016-5570-8 | J. Electronic Testing |
Keywords | Field | DocType |
Wide-I/O DRAM,Built-in self-test,Test time,Area overhead | Dram,Computer science,Fault detection and isolation,Communication channel,Real-time computing,Electronic engineering,Input/output,Mobile device,Bandwidth (signal processing),Built-in self-test,Embedded system,Stacking | Journal |
Volume | Issue | ISSN |
32 | 2 | 0923-8174 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kun-Lun Luo | 1 | 24 | 2.83 |
| Ming-Hsueh Wu | 2 | 1 | 1.04 |
| Chun-Lung Hsu | 3 | 59 | 14.53 |
| Chen-An Chen | 4 | 1 | 1.04 |