Name
Title | ||
|---|---|---|
A 35 dBm Output Power and 38 dB Linear Gain PA With 44.9% Peak PAE at 1.9 GHz in 40 nm CMOS. |
Abstract | ||
|---|---|---|
This paper presents a 1.9 GHz linear power amplifier (PA) architecture that improves its power efficiency in the power back-off (PBO) region. The combination of power transistor segmentation and digital gain compensation effectively enhances its power efficiency. A fast switching scheme is proposed, such that PA drivers and segments are switched ON and OFF according to signal power; thus, the PA p... |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/JSSC.2015.2510026 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Switches,Baseband,Radio frequency,Power generation,Gain,CMOS integrated circuits,Timing | Power gain,Electrical efficiency,Transmitter power output,Power semiconductor device,Computer science,Electronic engineering,Linear amplifier,RF power amplifier,Electrical engineering,Power bandwidth,Switched-mode power supply | Journal |
Volume | Issue | ISSN |
51 | 3 | 0018-9200 |
Citations | PageRank | References |
3 | 0.57 | 9 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Haoyu Qian | 1 | 4 | 1.30 |
| Qiyuan Liu | 2 | 3 | 0.57 |
| Jose Silva-Martinez | 3 | 630 | 86.56 |
| Sebastian Hoyos | 4 | 234 | 29.24 |