Title
Radiative Effects on MRAM-Based Non-Volatile Elementary Structures
Abstract
Radiation robust circuit design for harsh environments like space is a big challenge for today engineers and researchers. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. This work has for objective to improve the System on Chip (SoC) robustness against particle attacks targeting very advanced processes. This should be possible combining three already proven robust design techniques: Asynchronous communication, Silicon on Insulator (SOI) technologies and Spintronics. The combination of these three techniques should give some fundamentally new architecture with higher performances than what is available today in terms of robustness but also in terms of speed, consumption and surface.
Year
DOI
Venue
2015
10.1109/ISVLSI.2015.71
2015 IEEE Computer Society Annual Symposium on VLSI
Keywords
Field
DocType
Asynchronous integrated circuit Design,Radiation hardening,Radiative particle injection,28nm FD-SOI,Spintronics,STT-MRAM,SOT-MRAM
Silicon on insulator,Asynchronous communication,System on a chip,Computer science,Circuit design,Robustness (computer science),CMOS,Electronic engineering,Electronic circuit,Radiation hardening,Electrical engineering
Conference
ISSN
Citations 
PageRank 
2159-3469
0
0.34
References 
Authors
6
5
Name
Order
Citations
PageRank
Jeremy Lopes100.34
Gregory Di Pendina2337.27
Eldar Zianbetov3337.71
Edith Beigne453652.54
Lionel Torres516314.91