Name
Abstract | ||
|---|---|---|
In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of different bonding areas under different bonding temperature. When bonding temperature is under 370 °C, the resistance of the different areas (from 200 μm2 to 1000 μm2) fluctuate within a narrow range and more than 80 % of the resistance is less than 10 ohm. Compared with Au/c-Si contact, Au/a-Si contact is more reliable. When bonding temperature is above 370 °C, the resistance is related to the contact area and the discrete nature of the resistance is relatively large. According to statistics, more than 50 % of the resistance is above 100 ohm. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/NEMS.2015.7147499 | NEMS |
Keywords | Field | DocType |
anodic bonding, contact resistance, bonded vertical Kelvin method | Contact resistance,Composite material,Microelectromechanical systems,Wafer bonding,Anodic bonding,Ohm,Eutectic system,Contact area,Materials science,Amorphous solid | Conference |
ISSN | Citations | PageRank |
2474-3747 | 0 | 0.34 |
References | Authors | |
0 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Fengshan Fu | 1 | 0 | 0.68 |
| fang yang | 2 | 0 | 1.69 |
| Wei Wang | 3 | 234 | 41.10 |
| xian huang | 4 | 0 | 1.01 |
| jun he | 5 | 0 | 1.01 |
| li zhang | 6 | 0 | 1.01 |
| Taotao Guan | 7 | 0 | 1.01 |
| Rui Li | 8 | 0 | 0.34 |
| Dacheng Zhang | 9 | 32 | 12.02 |