Title
Predicting Vt mean and variance from parallel Id measurement with model-fitting technique
Abstract
To measure the variation of device V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> requires long test for conventional WAT test structures. This paper presents a framework that can efficiently and effectively obtain the mean and variance of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> for a large number of DUTs. The proposed framework applies the model-based random forest as its core model-fitting technique to learn a model that can predict the mean and variance of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> based on only the combined I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> measured from parallel connected DUTs. The experimental results based on the SPICE simulation of a UMC 28nm technology demonstrate that the proposed model-fitting framework can achieve a more than 99% R-squared for predicting both of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> mean and variance. Compared to conventional WAT test structures using binary search, our proposed framework can achieve 42.9X speedup in turn of the required iterations of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> measurement per DUT.
Year
DOI
Venue
2016
10.1109/VTS.2016.7477268
2016 IEEE 34th VLSI Test Symposium (VTS)
Keywords
Field
DocType
WAT test structures,wafer acceptance test,model-based random forest,core model-fitting technique,parallel connected DUTs,SPICE simulation,binary search,nMOS transistors
ID measurement,Logic gate,Computer science,Simulation,Spice,Algorithm,Electronic engineering,Binary search algorithm,Random forest,Speedup
Conference
ISSN
Citations 
PageRank 
1093-0167
1
0.40
References 
Authors
4
10