Name
Abstract | ||
|---|---|---|
Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory archite... |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/JPROC.2016.2574939 | Proceedings of the IEEE |
Keywords | Field | DocType |
Magnetic tunneling,Nonvolatile memory,Very large scale integration,Magnetoelectronics,Random access memory,Computer architecture,Performance evaluation,Spintronics | Standby power,Operations research,CMOS,Tunnel magnetoresistance,Engineering,Electronic circuit,Very-large-scale integration,Integrated circuit,Electrical engineering | Journal |
Volume | Issue | ISSN |
104 | 10 | 0018-9219 |
Citations | PageRank | References |
5 | 0.52 | 42 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Takahiro Hanyu | 1 | 441 | 78.58 |
| Tetsuo Endoh | 2 | 155 | 35.26 |
| Daisuke Suzuki | 3 | 47 | 7.32 |
| Hiroki Koike | 4 | 25 | 3.90 |
| Yitao Ma | 5 | 10 | 3.29 |
| Naoya Onizawa | 6 | 248 | 33.21 |
| Masanori Natsui | 7 | 80 | 15.10 |
| Shoji Ikeda | 8 | 14 | 1.58 |
| Hideo Ohno | 9 | 123 | 33.57 |