Title
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process.
Abstract
This work describes and discusses fast wafer level reliability (fWLR) Monitoring as a supporting procedure on productive wafers to achieve stringent quality requirements of automotive, medical and/or aviation applications. Examples are given for the various reliability topics: dielectrics, devices, metallisation, plasma charging with respect to required test structures, stress methods and data analysis. Application areas of fWLR are highlighted and limitations considered. Further aspects such as relevant reliability parameters, sampling strategies and out of control action plans are discussed.
Year
DOI
Venue
2016
10.1016/j.microrel.2016.07.120
Microelectronics Reliability
Keywords
Field
DocType
Fast wafer level reliability,Oxide breakdown,Negative bias temperature instability,Electromigration,Ring oscilator,Test structures,Plasma induced charging damage,Hot carrier stress,Well charging,Reliability monitoring
Wafer,Electronic engineering,Negative-bias temperature instability,Engineering,Wafer level reliability,Reliability (semiconductor),Reliability engineering,Automotive industry,Hot carrier stress
Journal
Volume
ISSN
Citations 
64
0026-2714
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Andreas Martin101.01
Rolf-Peter Vollertsen232.52
A. Mitchell300.34
M. Traving400.34
D. Beckmeier500.34
H. Nielen600.34