Title | ||
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Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. |
Abstract | ||
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This work describes and discusses fast wafer level reliability (fWLR) Monitoring as a supporting procedure on productive wafers to achieve stringent quality requirements of automotive, medical and/or aviation applications. Examples are given for the various reliability topics: dielectrics, devices, metallisation, plasma charging with respect to required test structures, stress methods and data analysis. Application areas of fWLR are highlighted and limitations considered. Further aspects such as relevant reliability parameters, sampling strategies and out of control action plans are discussed. |
Year | DOI | Venue |
---|---|---|
2016 | 10.1016/j.microrel.2016.07.120 | Microelectronics Reliability |
Keywords | Field | DocType |
Fast wafer level reliability,Oxide breakdown,Negative bias temperature instability,Electromigration,Ring oscilator,Test structures,Plasma induced charging damage,Hot carrier stress,Well charging,Reliability monitoring | Wafer,Electronic engineering,Negative-bias temperature instability,Engineering,Wafer level reliability,Reliability (semiconductor),Reliability engineering,Automotive industry,Hot carrier stress | Journal |
Volume | ISSN | Citations |
64 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Andreas Martin | 1 | 0 | 1.01 |
Rolf-Peter Vollertsen | 2 | 3 | 2.52 |
A. Mitchell | 3 | 0 | 0.34 |
M. Traving | 4 | 0 | 0.34 |
D. Beckmeier | 5 | 0 | 0.34 |
H. Nielen | 6 | 0 | 0.34 |