Name
Title | ||
|---|---|---|
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. |
Abstract | ||
|---|---|---|
For more than 10years a major part of MOSFET reliability publications are dealing with (N)BTI. The degradation and recovery mechanism is still not fully understood (Grasser, 2014). New publications demonstrate incessantly the agile debate on this important transistor aging phenomenon. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1016/j.microrel.2017.12.043 | Microelectronics Reliability |
Keywords | Field | DocType |
NBTI,Experimental,Modelling,Aging simulation,Verification | Small number,Physical modelling,Operating point,Design flow,Electronic engineering,Engineering,MOSFET,Arbitrary waveform generator,Transistor,Calibration | Journal |
Volume | ISSN | Citations |
82 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 4 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Christian Schlünder | 1 | 5 | 2.28 |
| K. Puschkarsky | 2 | 0 | 0.34 |
| Gunnar Andreas Rott | 3 | 2 | 1.22 |
| Wolfgang Gustin | 4 | 6 | 3.81 |
| Hans Reisinger | 5 | 4 | 3.06 |