Name
Abstract | ||
|---|---|---|
Spin transfer torque magnetic random access memory is a promising candidate to replace CMOS based on-chip memories due to its advantages, such as nonvolatility, high density, and scalability. However, its stochastic switching and higher sensitivity to process variation compared to CMOS memories can significantly affect its performance, energy, and reliability. Although a few works exist which anal... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TCAD.2017.2760861 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
Keywords | Field | DocType |
Magnetic tunneling,Switches,Tools,Random access memory,Computer architecture,Reliability,Microprocessors | Computer science,Magnetoresistive random-access memory,CMOS,Error detection and correction,Real-time computing,Electronic engineering,Process variation,Spin-transfer torque,Design space exploration,Scalability,Random access | Journal |
Volume | Issue | ISSN |
37 | 7 | 0278-0070 |
Citations | PageRank | References |
1 | 0.35 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sarath Mohanachandran Nair | 1 | 17 | 5.91 |
| Rajendra Bishnoi | 2 | 132 | 19.64 |
| Mohammad Saber Golanbari | 3 | 23 | 6.43 |
| Fabian Oboril | 4 | 288 | 26.71 |
| Fazal Hameed | 5 | 54 | 7.25 |
| Mehdi B. Tahoori | 6 | 1537 | 163.44 |