Name
Title | ||
|---|---|---|
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology |
Abstract | ||
|---|---|---|
Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/PATMOS.2018.8464145 | 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) |
Keywords | Field | DocType |
Ultra-Low Voltage,FDSOI,Body Bias,RTN,Jitter,Ring Oscillators | Ring oscillator,NMOS logic,Computer science,Electronic engineering,Low voltage,Jitter,PMOS logic,Optoelectronics,Threshold voltage,Low-power electronics,Biasing | Conference |
ISSN | ISBN | Citations |
2474-5456 | 978-1-5386-6366-0 | 0 |
PageRank | References | Authors |
0.34 | 2 | 12 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Enrique Barajas | 1 | 6 | 4.27 |
| xavier aragones cervera | 2 | 45 | 9.62 |
| Diego Mateo | 3 | 43 | 10.97 |
| Francesc Moll | 4 | 55 | 14.87 |
| Antonio Rubio | 5 | 42 | 16.60 |
| Javier Martín-Martínez | 6 | 48 | 13.91 |
| R. Rodríguez | 7 | 36 | 11.51 |
| M. Porti | 8 | 0 | 2.37 |
| Montserrat Nafría | 9 | 24 | 9.21 |
| Rafael Castro-López | 10 | 20 | 3.95 |
| Elisenda Roca | 11 | 129 | 26.84 |
| Francisco V. Fernández | 12 | 234 | 40.82 |