Name
Abstract | ||
|---|---|---|
In this paper, we discuss the potential foundry announced integration of magnetic random access memory (MRAM) on fully depleted silicon-on-insulator (FDSOI). The spin transfer torque magnetic tunnel junction (STT-MTJ) and the next-generation voltage-controlled magnetic anisotropy MTJ are separately integrated into a 28-nm FDSOI process as the MRAM or magnetoelectric random access memory (MeRAM)-on... |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/TCSI.2018.2854277 | IEEE Transactions on Circuits and Systems I: Regular Papers |
Keywords | Field | DocType |
Silicon-on-insulator,Magnetic tunneling,Aging,Transistors,Writing,Perpendicular magnetic anisotropy | Silicon on insulator,Electronic engineering,Magnetoresistive random-access memory,CMOS,Process variation,Tunnel magnetoresistance,Spin-transfer torque,Transistor,Mathematics,Random access | Journal |
Volume | Issue | ISSN |
66 | 1 | 1549-8328 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hao Cai | 1 | 60 | 21.94 |
| You Wang | 2 | 29 | 9.66 |
| Lirida A. B. Naviner | 3 | 83 | 26.52 |
| Xinning Liu | 4 | 8 | 4.02 |
| Weiwei Shan | 5 | 22 | 12.51 |
| Jun Yang | 6 | 588 | 39.42 |
| Weisheng Zhao | 7 | 730 | 105.43 |