Paper Info
Title
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis
Abstract
We investigate the dc, electroluminescence (EL) and trapping properties of gate-injection transistors without and with the pdrain terminal connected to the drain (called GITs and HD-GITs respectively) and with and without field-plate. Our results indicate that: (i) the dc characteristics are not influenced by the presence of the pdrain terminal and of the field plate; (ii) EL measurements indicate that GITs and HD-GITs have comparable hot-electron density and energy. (iii) When submitted to OFF-state, all devices show similar dynamic-RON, independently of the presence of pdrain and field plate; (iv) on the other hand, under semi-ON trapping conditions substantial differences are observed. Specifically, the HD-GITs have a significantly lower dynamic-R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> compared to GITs; a further improvement is obtained through the use of a field plate. (v) Transient R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> measurements indicate that the traps filled are the same both under OFF-state and semi-ON conditions. The activation energy E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</inf> of this trap is E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</inf> ∼0.8 eV, i.e. it could be ascribed to deep levels related to C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</inf> , as suggested also by pulsed measurements carried out under external illumination. Based on the original results collected within this paper, we conclude that the difference in dynamic-R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> shown in semi- <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> by GITs and HD-GITs is related to the injection of holes from the pdrain terminal that reduces the impact of hot-electron trapping processes.
Year
DOI
Venue
2019
10.1109/IRPS.2019.8720472
2019 IEEE International Reliability Physics Symposium (IRPS)
Keywords
Field
DocType
GaN,GIT,HD-GIT,trapping,hot-electron
Engineering physics,Electronic engineering,Engineering,Electron
Conference
ISSN
ISBN
Citations 
1541-7026
978-1-5386-9504-3
0
PageRank 
References 
Authors
0.34
0
10
Name
Order
Citations
PageRank
E. Fabris100.34
Matteo Meneghini24530.20
C. De Santi300.34
M. Borga400.68
G. Meneghesso55222.83
E. Zanoni6137.01
Yusuke Kinoshita700.68
K. Tanaka82967377.99
H Ishida9141.78
Tetsuzo Ueda1023.60