Name
Title | ||
|---|---|---|
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability |
Abstract | ||
|---|---|---|
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed investigation of the process split and geometry dependency is done. From this study, we propose that a parasitic sidewall transistor is present, which is the cause for degradation in the p-GaN gate. The sidewall leakage has been substantiated by TCAD simulation and also by a novel method consisting of EBIC measurements directly applied on the cross section of a p-GaN gate. Based on this analysis we performed a process modification, which has led to a significant improvement in terms of gate reliability. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/IRPS.2019.8720411 | 2019 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | Field | DocType |
p-GaN gate,sidewall,TDDB,gate leakage,lifetime,EBIC | Engineering physics,Limiting factor,Electronic engineering,Perimeter,Engineering | Conference |
ISSN | ISBN | Citations |
1541-7026 | 978-1-5386-9504-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 16 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Steve Stoffels | 1 | 6 | 5.01 |
| Niels Posthuma | 2 | 0 | 1.69 |
| Stefaan Decoutere | 3 | 97 | 51.66 |
| Benoit Bakeroot | 4 | 6 | 3.43 |
| A. N. Tallarico | 5 | 3 | 2.39 |
| Enrico Sangiorgi | 6 | 8 | 4.78 |
| Claudio Fiegna | 7 | 6 | 1.50 |
| Jun Zheng | 8 | 140 | 11.99 |
| X. Ma | 9 | 1 | 0.73 |
| M. Borga | 10 | 0 | 0.68 |
| Elena Fabris | 11 | 0 | 0.34 |
| M. Meneghini | 12 | 0 | 0.68 |
| E. Zanoni | 13 | 13 | 7.01 |
| G. Meneghesso | 14 | 52 | 22.83 |
| J. Priesol | 15 | 0 | 0.68 |
| Alexander Šatka | 16 | 4 | 3.57 |