Name
Title | ||
|---|---|---|
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C |
Abstract | ||
|---|---|---|
Pure boron deposited on silicon for the formation of p
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>
n-like junctions was studied for deposition temperatures down to 50 °C. The commonly used chemical-vapor deposition method was compared to molecular beam epitaxy with respect to the electrical characteristics and the boron-layer compactness as evaluated by etch tests, ellipsometry and atomic force microscopy. Electrically, the important parameters are minority carrier electron injection into the p-type region and the sheet resistance along the boron-to-silicon interface which appear to be independent of deposition method for temperatures down to 300 °C. Only with molecular beam epitaxy did we succeed in producing substantial layers for the lower temperatures down to 50 °C. Also, at this very low temperature, p
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup>
n-like diodes were formed, but the suppression of electron injection was less efficient than at the higher temperatures. From simulations, assuming that the attractive electrical behavior is due to a monolayer of fixed negative charge at the interface, the concentration of holes needed to explain the I-V characteristics is estimated to be 1.4×10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup>
cm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>
for 50 °C deposition and 1.1×1013 cm-2 for 400 °C. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ESSDERC.2019.8901810 | ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
chemical vapor deposition (CVD),electron injection,fixed interface charge,molecular beam epitaxy (MBE),pure antimony,pure boron,silicon diodes,ultra-shallow junctions | Molecular beam epitaxy,Analytical chemistry,Monolayer,Deposition (law),Diode,Boron,Sheet resistance,Materials science,Ellipsometry,Silicon | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-7281-1540-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Tihomir Knezevic | 1 | 0 | 0.34 |
| Tomislav Suligoj | 2 | 1 | 9.41 |
| Xingyu Liu | 3 | 0 | 0.34 |
| Lis K. Nanver | 4 | 1 | 2.65 |
| Ahmed Elsayed | 5 | 0 | 0.68 |
| Jan F. Dick | 6 | 0 | 0.34 |
| Jörg Schulze | 7 | 1 | 1.30 |