Name
Title | ||
|---|---|---|
A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level |
Abstract | ||
|---|---|---|
In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1016/j.vlsi.2020.02.002 | Integration |
Keywords | DocType | Volume |
Time-dependent variability,TDV,Random telegraph noise,RTN,Bias temperature instability,BTI,Characterization,Hot-carrier injection,HCI,CMOS,Reliability,Simulation | Journal | 72 |
Issue | ISSN | Citations |
C | 0167-9260 | 1 |
PageRank | References | Authors |
0.43 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Saraza-Canflanca | 1 | 1 | 1.45 |
| J. Diaz-Fortuny | 2 | 1 | 0.77 |
| R. Castro-López | 3 | 79 | 18.20 |
| Elisenda Roca | 4 | 129 | 26.84 |
| Javier Martín-Martínez | 5 | 48 | 13.91 |
| R. Rodríguez | 6 | 53 | 5.85 |
| M. Nafrı́a | 7 | 1 | 3.14 |
| F.V. Fernández | 8 | 1 | 1.79 |