Name
Abstract | ||
|---|---|---|
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field failures. This article presents a detailed analysis ... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TVLSI.2021.3071940 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | DocType | Volume |
Circuit faults,FinFETs,Random access memory,Transistors,Manufacturing,Integrated circuit modeling,Systematics | Journal | 29 |
Issue | ISSN | Citations |
6 | 1063-8210 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Guilherme Cardoso Medeiros | 1 | 6 | 3.59 |
| Moritz Fieback | 2 | 8 | 3.03 |
| Lizhou Wu | 3 | 5 | 2.24 |
| Mottaqiallah Taouil | 4 | 224 | 33.40 |
| L. Bolzani Poehls | 5 | 6 | 2.87 |
| Said Hamdioui | 6 | 887 | 118.69 |