Title
CCECE 2021 Invited Paper: Holistic Performance, Reliability and Thermal Understanding of HPC Real Utilization on Silicon Architecture
Abstract
The power density and total power from the package have been increased significantly. The rapid rate of power density increases from one generation to the next not only happens at the device level but also happens at the localized area on the devices. The objective of this study is to build more understanding of the localized high-power density in silicon blocks with respect to the impact in tempe...
Year
DOI
Venue
2021
10.1109/CCECE53047.2021.9569128
2021 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)
Keywords
DocType
ISSN
Temperature sensors,Resistance,Power system measurements,Density measurement,Power distribution,Silicon,Transistors
Conference
0840-7789
ISBN
Citations 
PageRank 
978-1-6654-4864-2
0
0.34
References 
Authors
0
7
Name
Order
Citations
PageRank
Gamal Refai-Ahmed100.34
Hoa Do200.34
I-Ru Chen300.34
Jae-Gyung Ahn431.92
Huayan Wang500.34
Xin Wu651.54
Ramalingam, S.721.43